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Carrier dynamics at deep traps in ion implanted silicon: Possible signature of defect clusters
, Y.N. Mohapatra, S. Rangan, S. Ashok
Published in
Volume: 4746 II
Pages: 1025 - 1029
We report a systematic search for electrical signature of defect clusters in ion-implanted silicon using Deep Level Transient Spectroscopy (DLTS) and related capacitance transient measurements. We show that slow carrier capture dynamics among energy broadened multiple states and occurrence of capture induced metastable states are some of the distinctive hall marks of cluster related trap levels. Isothermal transient spectroscopy is shown to be appropriate for recognition of these features.
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