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Analysis and modelling of lateral heterostructure field-effect bipolar transistors
Z.-E. Ooi, , S.L.G. Ng, G.K.L. Goh, A. Dodabalapur
Published in Elsevier B.V.
Volume: 12
Issue: 11
Pages: 1794 - 1799
Lateral heterostructure field-effect bipolar transistors (LH-FEBTs) are thin-film transistors that have a distinct heterojunction located roughly midway between the source and drain contacts, with a p-type semiconductor on one side of the junction, and an n-type semiconductor on the other. These devices have potential in display applications but are relatively new to the research community. In this paper, we describe the fabrication of a hybrid LH-FEBT using pentacene and ZnO as the p- and n-type semiconductors, respectively, and describe its unusual bell-shaped electrical transfer characteristics. Using an equivalent circuit approach, we analyse quantitatively how the main features of the current-voltage curves relate to semiconductor properties such as carrier mobility and threshold voltage - information that is essential to the design of such devices. © 2011 Elsevier B.V. All rights reserved.
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Published in Elsevier B.V.
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