A light-emitting field-effect transistor was fabricated, with its architecture based on a distinct heterojunction located midway between the source and drain contacts. Tetracene enabled hole transport on one side of the heterojunction (hole mobility ∼0.071 cm 2/Vs), while amorphous solution-processed zinc tin oxide supported electron transport on the other side (electron mobility ∼0.81 cm 2/Vs). The drain current vs. gate voltage curves of this device have a bell-shaped profile that is characteristic of lateral heterojunction bipolar field-effect transistors. The green light emission-from tetracene-closely follows the trend in drain current and is naked-eye visible in a darkened room. © 2012 American Institute of Physics.

Samarendra Pratap Singh

Physics

(SoNS) School of Natural Sciences

Ooi Z.-E.

Foong T.R.B.

Leok Chan K.

Dodabalapur A.

Fulltext

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Shiv Nadar University

A light emitting transistor based on a hybrid metal oxide-organic semiconductor lateral heterostructure

Applied Physics Letters

As printed and flexible plastic electronic gadgets become increasingly viable today, there is a need to develop materials that suit the fabrication processes involved. Two desirable requirements are solution-processable active materials or precursors and low-temperature processability. In this article, we describe a straightforward method of depositing ZnO films by simple spin coating of an organometallic diethylzinc precursor solution and annealing the resulting film at low temperatures (≤200 °C) without involving any synthetic steps. By controlling the humidity in which annealing is conducted, we are able to adjust the intrinsic doping level and carrier concentration in diethylzinc-derived ZnO. Doped or conducting transport layers are greatly preferable to undoped layers as they enable low-resistance contacts and minimize the potential drops. This ability to controllably realize doped ZnO is a key feature of the fabrication process that we describe in this article. We employ field-effect measurements as a diagnostic tool to measure doping levels and mobilities in ZnO and demonstrate that doped ZnO with high charge carrier concentration is ideal for solar cell applications. Respectable power conversion efficiencies (up to 4.5\%) are achieved in inverted solar cells that incorporate diethylzinc-derived ZnO films as the electron transport layer and organic blends as the active material. Extensions of this approach to grow ternary and quaternary films with organometallic precursor chemicals will enable solution based growth of a number of semiconductor films as well as a method to dope them. © 2012 The Royal Society of Chemistry.

Journal of Materials Chemistry

ZnO layers for opto-electronic applications from solution-based and low-temperature processing of an organometallic precursor

Organic Electronics

Analysis and modelling of lateral heterostructure field-effect bipolar transistors

Electrical characteristics of zinc oxide-organic semiconductor lateral heterostructure based hybrid field-effect bipolar transistors

Advanced Functional Materials

Solution-Processed Zinc Oxide as High-Performance Air-Stable Electron Injector in Organic Ambipolar Light-Emitting Field-Effect Transistors

Advanced Materials

A Color-Tuneable Organic Light-Emitting Transistor

Solution-processed zinc–tin oxide thin-film transistors with low interfacial trap density and improved performance